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| EIC7785-8 UPDATED 08/21/2007 7.70-8.50GHz 8-Watt Internally-Matched Power FET FEATURES * * * * * * * 7.70-8.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 34% Power Added Efficiency -46 dBc IM3 at PO = 28.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 7.70-8.50GHz VDS = 10 V, IDSQ 2200mA Gain at 1dB Compression f = 7.70-8.50GHz VDS = 10 V, IDSQ 2200mA Gain Flatness f = 7.70-8.50GHz VDS = 10 V, IDSQ 2200mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ 2200mA f = 7.70-8.50GHz Drain Current at 1dB Compression f = 7.70-8.50GHz Output 3rd Order Intermodulation Distortion f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2 VDS = 10 V, IDSQ 65% IDSS f = 8.50GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 38.5 7.5 TYP 39.5 8.5 0.6 34 2200 -43 -46 4000 -2.5 3.5 4500 -4.0 4.0 o MAX UNITS dBm dB dB % 2600 mA dBc mA V C/W VDS = 3 V, IDS = 40 mA Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING FOR EFE SYMBOLS PARAMETERS ABSOLUTE1 15V -5V 96mA -19.2mA 39dBm 175C -65C to +175C 37.5W CONTINUOUS2 10V -4V 28.8mA -4.8mA @ 3dB Compression 175C -65C to +175C 37.5W Vds Vgs Igf Igr Pin Tch Tstg Pt Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 4 Revised October 2007 EIC7785-8 UPDATED 08/21/2007 7.70-8.50GHz 8-Watt Internally-Matched Power FET PERFORMANCE DATA Typical S-Parameters (T= 25C, 50 system, de-embedded to edge of package) VDS = 10 V, IDSQ 2200mA S11 and S22 0. 6 Swp Max 8.7GHz 2. 0 1.0 20 0. 8 S21 and S12 5 .0 0. S21 and S12 (dB) 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 10.0 -0 .4 -0 .8 S[2,2] EIC7785-8 -1.0 .0 -2 -0 .6 FREQ (GHz) --- S11 --MAG ANG 7.5 7.6 7.7 7.8 7.9 8 8.1 8.2 8.3 8.4 8.5 8.6 8.7 0.5659 0.5159 0.4615 0.3953 0.3292 0.2633 0.2092 0.1858 0.2058 0.2616 0.3184 0.3806 0.4359 -169.06 177.44 161.8 143.64 123.15 96.94 62.41 17.93 -25.56 -60.84 -87.64 -108.87 -127.56 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com -3 .0 S[1,1] EIC7785-8 -4 .0 -5. 0 -0 .2 Swp Min 7.5GHz 2.653 2.7741 2.9098 3.0355 3.1442 3.2247 3.2539 3.2534 3.1658 3.0487 2.8796 2.6767 2.4875 -1 0.0 0. 4 3. 0 4. 0 10 2 10 .0 0 DB(|S[2,1]|) EIC7785-8 DB(|S[1,2]|) EIC7785-8 -10 -20 7.5 7.8 8.1 Frequency (GHz) 8.4 8.7 --- S21 --MAG ANG --- S12 --MAG ANG --- S22 --MAG ANG -99.16 -111.83 -125.33 -139.33 -153.81 -169.11 174.99 158.73 142.39 126.26 110.62 95.4 81.13 0.1125 0.1208 0.127 0.1344 0.1405 0.1461 0.1485 0.1502 0.1484 0.143 0.1378 0.1301 0.1224 -153.47 -165.72 -178.82 167.39 153.05 138.07 122.37 107.25 91.76 76.38 60.95 46.15 30.86 0.5992 0.5788 0.5468 0.5069 0.4486 0.3863 0.3151 0.2486 0.2147 0.2226 0.27 0.3349 0.3959 27.25 16.12 4.26 -8.19 -22.61 -39.28 -59.64 -87.21 -122.78 -161.62 167.25 145.24 128.51 page 2 of 4 Revised October 2007 EIC7785-8 UPDATED 08/21/2007 7.70-8.50GHz 8-Watt Internally-Matched Power FET Power De-rating Curve and IM3 Definition Power Dissipation vs. Temperature 40 35 Total Power Dissipation (W) 30 25 20 15 10 (2f2 - f1) or (2f1 - f2) THIRD-ORDER INTERCEPT POINT IP3 Pout [S.C.L.] (dBm) Potentially Unsafe Operating Region IP3 = Pout + IM3/2 f1 or f2 Pout Pin IM3 Safe Operating Region IM3 f1 f2 (2f1-f2) f1 f2 (2f2-f1) 5 0 0 25 50 75 100 125 Case Temperature (C) 150 175 Pin [S.C.L.] (dBm) Typical Power Data (VDS = 10 V, IDSQ = 2200 mA) 41 40 P-1dB (dBm) Typical IM3 Data (VDS = 10 V, IDSQ 65% IDSS) 12 11 10 9 8 P-1dB & G-1dB vs Frequency IM3 vs Output Power -20 -25 -30 f1 = 8.50 GHz, f2 = 8.51 GHz 39 38 37 P-1dB (dBm) 36 7.6 7.8 8.0 8.2 8.4 8.6 Frequency (GHz) IM3 (dBc) G-1dB (dB) -35 -40 -45 -50 -55 -60 23 24 25 26 27 28 29 30 31 32 33 34 IM3 (dBc) G-1dB (dB) 7 Pout [S.C.L.] (dBm) Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 3 of 4 Revised October 2007 EIC7785-8 UPDATED 08/21/2007 7.70-8.50GHz 8-Watt Internally-Matched Power FET PACKAGES OUTLINE Dimensions in inches, Tolerance + .005 unless otherwise specified EIC7785-8 (Hermetic) EIC7785-8NH (Non-Hermetic) Excelics EIC7785-8 .827.010 .669 .120 MIN .024 .421 Excelics EIC7785-8NH YYWW SN .120 MIN YYWW SN .125 .508.008 .442 .168.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105.008 ALL DIMENSIONS IN INCHES Caution! ESD sensitive device. Caution! ESD sensitive device. ORDERING INFORMATION Part Number EIC7785-8 EIC7785-8NH Notes: Packages Hermetic Non-Hermetic Grade1 Industrial Industrial fTest (GHz) 7.70-8.50GHz 7.70-8.50GHz P1dB (min) 38.5 38.5 IM3 (min)2 -43 -43 1. Contact factory for military and hi-rel grades. 2. Exact test conditions are specified in "Electrical Characteristics" table. DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 4 of 4 Revised October 2007 |
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